Vast researches are first generalized and developed on a theory and application of avalanche transistors and thyristors. The analysis of their guided static descriptions is executed. The physical mechanisms of their ultrafast switching are described in the conditions of a limit expansion of area of by volume charge (ООЗ). Maximum possibilities of devices are appraised. The special attention is spared to fundamental bases of construction of charts and development of circuit technology these devices. Hundreds of charts and their application are described in new and in the perspective areas of science and technique : high-speed flow lines, measuring devices, devices of nuclear and physical electronics, laser range-finders and radars, videoimpulsive radars, георадарарах, optical and impulsive рефлектометрах of and otherFor research workers, engineers, graduate students and students of institutions of higher learning and universities scientific and technical profile, and also for the prepared radio amateurs.